| PART |
Description |
Maker |
| 2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor
-1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
| BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| CT30SM-12 CT30SM-1 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER UPS USE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| IRG4PH40KDPBF IRG4PH40KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
